PDB3910L Datasheet - Potens semiconductor

PDB3910L N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

PDB3910L Features

* 30V,8.5A, RDS(ON) =17mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

PDB3910L-Potenssemiconductor.pdf

PDB3910L Datasheet Preview — Preview of PDB3910L PDF

Datasheet Details

Part number:

PDB3910L

Manufacturer:

Potens semiconductor

File Size:

651.92 KB

Description:

N-channel mosfet.

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PDB3910L PDB3910L N-Channel MOSFET Potens semiconductor

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