Datasheet4U Logo Datasheet4U.com

PDB3910L Datasheet - Potens semiconductor

PDB3910L-Potenssemiconductor.pdf

Preview of PDB3910L PDF
PDB3910L Datasheet Preview Page 2 PDB3910L Datasheet Preview Page 3

Datasheet Details

Part number:

PDB3910L

Manufacturer:

Potens semiconductor

File Size:

651.92 KB

Description:

N-channel mosfet.

PDB3910L, N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDB3910L Features

* 30V,8.5A, RDS(ON) =17mΩ @VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green Device Available Applications

* MB / VGA / Vcore

* POL Applications

* SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID

📁 Related Datasheet

📌 All Tags

Potens semiconductor PDB3910L-like datasheet