PDB3907Z Datasheet (Potens semiconductor)

PDB3907Z, P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDB3907Z Features

* -30V,-30A, RDS(ON) =18mΩ@VGS = -10V

* Fast switching

* Green Device Available

* Suit for -4.5V Gate Drive Applications Applications

* MB / VGA / Vcore

* POL Applications

* Load Switch

* LED Application S Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbo