PDB3907Z
Potens semiconductor
754.78kb
P-channel mosfet. These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e
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These P-Channel enhancement mode power field effect transistors are using trench DMOS technology..
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These N-Channel enhancement mode power field effect transistors are using .
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±.008 [0.20] .
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ANODE INDEX .0.
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