HF-SEMI Datasheet | Specifications & PDF Download

NTP150N65S3HF MOSFET – Power, N-Channel, SUPERFET III, FRFET 650 V, 24 A, 150 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high

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www.DataSheet4U.com PD 2.506 PRELIMINARY HFA50HF20 Ultrafast, Soft Recovery Diode CATHODE HEXFRED Features • • • • • TM VR = 200V V F = 0.96V Qr

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NTHL033N65S3HF MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 70 A, 33 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high

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TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage

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TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage

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SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3770T EPITAXIAL PLANAR NPN TRANSISTOR www.DataSheet4U.com E FEATURES Low N

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ON Semiconductort JFET VHF/UHF Amplifiers N–Channel — Depletion BF245A BF245B MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–So

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S−AV6 TOSHIBA RF POWER AMPLIFIER MODULE S−AV6 VHF MARINE FM RF POWER AMPLIFIER MODULE Unit: mm l High Gain : Po ≥ 28W, GP ≥ 21.4dB, ηT ≥ 45% MAXIMUM

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Confidential ZXHF5002 4:2 IF switch with integrated gain and control Summary The ZXHF5000 provides an integrated IF solution for multiple output LNB

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40HF(R) Series High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY DIODES 40 AMP FEATURES  Available as “HR”

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TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com

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JDP2S02AFS TOSHIBA Diode Silicon Epitaxial PIN Type www.DataSheet4U.com JDP2S02AFS UHF~VHF Band RF Switch Applications Unit: mm • • • Suitable for re

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BB181LX VHF variable capacitance diode Rev. 01 — 19 February 2009 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description

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TOC UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES DESCRIPTION The KV 1900 series of super hyperabrupt varactor diodes combines low voltage

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3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 (Z) 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF =

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3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4

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HF HYPERABRUPT TUNING DIODES • Extremely high capacitance ratios provide frequency tuning up to 4:1 • Linear performance is achieved between 1.5 and 4

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VHF HYPERABRUPT TUNING DIODES LV2001(A) - LV2002(A) PART NUMBER LV2001 LV2001A LV2002 LV2002A CT CAPACITANCE (pF) f = 1 MHz VR= 4 Vdc VR= 8 Vdc VR=20

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