
TIM8596-2 - MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 33.5dBm at 8.5GHz to 9.6GHz ・HIGH GAIN
G1dB= 7.5dB at 8.5GHz to 9.6GHz ・HERMETICALLY SEA
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www.DataSheet.co.kr July 2011 Single-Rail ARINC .
HI-8596 Distributor