
TIM8596-2 - MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 33.5dBm at 8.5GHz to 9.6GHz ・HIGH GAIN
G1dB= 7.5dB at 8.5GHz to 9.6GHz ・HERMETICALLY SEA
Rating:
1
★
(5 votes)