TGI8596-50

MICROWAVE POWER GaN HEMT

Toshiba

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	Toshiba America Electronic Components	TGI8596-50	TGI8596-50	RF Small Signal FieldEffect Transistor NChannel (Alt: TGI8596-50)	EBV Elektronik	0	0	$0	🛒 Buy Now

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TGI8596-50

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Microwave power gan hemt.
MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 4.
7.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE.

✔ TGI8596-50 Features

ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS

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