TGI8596-50 Datasheet - Toshiba

TGI8596-50, MICROWAVE POWER GaN HEMT

MICROWAVE POWER GaN HEMT TGI8596-50

Features

* ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN.
TYP.
MAX.
Output Power Drain Current Power Added Efficiency Pout I

TGI8596-50-Toshiba.pdf