HM70 Datasheet | Specifications & PDF Download

HM70P04K-VB HM70P04K-VB Datasheet P-Channel 4 0 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = -10 V RDS(on) () at VGS

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HM7002-VB HM7002-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V ID (mA) 250

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TO-92 Plastic-Encapsulate MOSFETS +07000 V(BR)DSS 60 V MOSFET (N-Channel) RDS(on)MAX 5Ω@10V 6Ω@4.5V ID 200mA TO-92 1. SOURCE 2. GATE 3. DRAIN FEA

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Previous Datasheet www.datasheet4u.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1564 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRA

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Previous Datasheet www.datasheet4u.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1564 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRA

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Small Signal MOSFET 380 mAmps, 60 Volts N–Channel SOT–23 FEATURES • ESD Protected • Low RDS(on) • Surface Mount Package • This is a Pb−Free Device •

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HERMETIC SEALED PRECISION METAL FILM RESISTORS HM SERIES RoHS Term.W is RoHS compliant & 260°C compatible RESISTORS CAPACITORS COILS DELAY LINES R

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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1564 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHM7064 IR

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www.datasheet4u.com PD - 90887E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRHM7054 IRHM3054 IRHM4054 IRHM8054

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P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM70P03K uses advanced trench technology to provide excellent RDS(ON), low gate charge and ope

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HM70P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM70P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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N-Channel Enhancement Mode Power MOSFET HM7002 GENERAL FEATURES ● VDS = 60V,ID = 0.5A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead free produ

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APTC60HM70T3 Full - Bridge Super Junction MOSFET VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C Application • Welding converters • Swit

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P-Channel Enhancement Mode Power MOSFET Description The HM70P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate

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N-Channel Enhancement Mode MOSFET ejTMMO Feature 60V/0.2A, R DS(ON) = 7.5Ω(MAX) @V GS = 10V. Id = 0. A RDS(ON) = 7.5Ω(MAX) @V GS = 5V . Id = 0.05A S

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Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–723 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requirin

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HM7002SR Small Signal MOSFET 30 V, 154 mA, Single, N−Channel, Gate ESD Protection, SC−89 Features • Low Gate Charge for Fast Switching • Small 1.6 X

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HM7002KR Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SC-70 HM7002KR 1. FEATURES ● We declare that the material of product compliance with RoHS

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APTC60HM70SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VBUS CR1A CR3A VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C

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APTC60HM70T1G Full - Bridge Super Junction MOSFET Power Module 3 Q1 5 Q2 7 4 Q3 2 Q4 9 VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C ID = 39A @ Tc = 25°C

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