.
Huajing Microelectronics
CD7388CZ - Automobile Amplifier
ഀݾԨা CD7388CZ 4u41W кׂູٟӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ˄᳔ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅.
Huajing Microelectronics
BT40T60ANFU - Silicon FS Trench IGBT
Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I.
Huajing Microelectronics
CS630A4H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.
Huajing Microelectronics
CS50N20ANH - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-.
Huajing Microelectronics
CS150N04A8 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d.
Huajing Microelectronics
BT15T120ANF - Silicon FS Planar IGBT
Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120.
Huajing Microelectronics
CS1N80A1H - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS1N80 A1H ○R General Description： CS1N80 A1H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
Huajing Microelectronics
2H1002A4 - Two terminal constant current devices
R ○ 2H1002 A4 2H1002 A4 CCD（Constant Current Device） LED ， ， ，。 VB Ptot （Ta=25℃） 120 1.2 V W ● ● ESD(HBM )>8KV ● T5/T8 LED ● LED ●.
Huajing Microelectronics
CS830A4RD - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
HUAJING MICROELECTRONICS
CS13J65A0-G - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j.
Huajing Microelectronics
3DD13012AN - Silicon NPN triple diffusion type bipolar transistor
3DD13012 AN NPN ， ， ， ， 、 。 NPN 3DD13012 AN ○R ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 15 120 V A W TO-3P(N) -.
Huajing Microelectronics
CS100N03B4 - Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al.
Huajing Microelectronics
CD1619CB - 1-Chip FM/AM Radio Tuner
CD1619CB 1、 CD1619CB 、、。 ： ● ：VCC=3V ，FM：ICCQ=5.3mA；AM：ICCQ=3.4mA（） ● FM/AM ● ：VCC=6V，RL=8Ω，PO=500mW（） ● AFC ● RF AGC、IF AGC ● LED ● ● ：S.
Huajing Microelectronics
CV203CZ - 10W car radio audio power amplifier
10W 1. CV203CZ 10W 1.6 2. 2.1 ZIP5 CV203CZ B 3.5A 2.2 1 2 3 IN NF GND 4 OUT 5 VCC 14 0510 5807123-5542 14 0510 5803016 3. 3.1 DC 3.3 Tam.
Huajing Microelectronics
3DD127D - NPN Transistor
NPN 3DD127D ○R 3DD127D NPN ， ， ， ， 、 。 ● ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 2.5 50 V A W TO-126F -10℃～40℃ .
Huajing Microelectronics
2CZ10150A9 - N-type Silicon Schottky Rectifier Diode
N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di.
Huajing Microelectronics
2CZ20100A9S - N-type Silicon Schottky Rectifier Diode
2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per.
Huajing Microelectronics
BT25T120CKR - Silicon FS Trench IGBT
Silicon FS Trench IGBT BT25T120 CKR ○R General Description： Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integr.
Huajing Microelectronics
BT40T60ANFD - Insulated gate bipolar transistor
BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280 .
