HUAJING MICROELECTRONICS Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS630 A4H ○R General Description： CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

Rating: 1 ★ (18 votes)

ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

Rating: 1 ★ (9 votes)

Silicon N-Channel Power MOSFET CS50N20 ANH ○R General Description： CS50N20 ANH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

Rating: 1 ★ (8 votes)

Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

Rating: 1 ★ (7 votes)

Rating: 1 ★ (6 votes)

Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

Rating: 1 ★ (6 votes)

Silicon N-Channel Power MOSFET CS12N65 A8H ○R General Description： CS12N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

Rating: 1 ★ (6 votes)

Silicon N-Channel Power MOSFET CS20N65F A9H ○R General Description： CS20N65F A9H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-

Rating: 1 ★ (6 votes)

Silicon N-Channel Power MOSFET CS90N03 B3 ○R General Description： CS90N03 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

Rating: 1 ★ (6 votes)

R ○ 2H1002 A4 2H1002 A4 CCD（Constant Current Device） LED ， ， ，。 VB Ptot （Ta=25℃） 120 1.2 V W ● ● ESD(HBM )>8KV ● T5/T8 LED ● LED ●

Rating: 1 ★ (6 votes)

NPN 3DD13009 B8 ○R 3DD13009 B8 NPN ， ， ， 、 。 ● ● ● ● ● ● ● VCEO IC Ptot（TC=25℃） 400 13 100 V A W TO-220AB -10℃～4

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

BT40T60 ANFD ○R BT40T60 ANFD FS IGBT ， ，。 RoHS 。 ● FS ，； ● ：VCE(sat),TYP=1.8V @IC=40A,VGE=15V ； VCES IC Ptot （TC=25℃） VCE(sat) 600 40 280

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)

Silicon N-Channel Power MOSFET CS10J65 A0-G ○R General Description： CS10J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

Rating: 1 ★ (5 votes)

Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

Rating: 1 ★ (5 votes)

N 2CZ20100 A4S ○R 2CZ20100 A4S ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（IF=10A） 100 2×10 0.85 TO-252 V A V -10℃～40℃ 1 ＜85％

Rating: 1 ★ (5 votes)

2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

Rating: 1 ★ (5 votes)

Rating: 1 ★ (5 votes)