Hot-Carrier Datasheet | Specifications & PDF Download

MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−effi

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MMBD101 CASE 318-02/03, STYLE 8 SOT-23 (TO-236AA/AB) HOT-CARRIER UHF MIXER DIODE MAXIMUM RATINGS Rating Reverse Voltage Symbol vR THERMAL CHARACTE

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LESHAN RADIO COMPANY, LTD. Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for us

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MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−effi

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily

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lN5823, lN5824, lN5825 (SILICON) Designers Data Sheet HOT CARRIER POWER RECTIFIERS emploYing the Schottky Barner pnnclple In a large area metaHo-sl

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lN5823, lN5824, lN5825 (SILICON) Designers Data Sheet HOT CARRIER POWER RECTIFIERS emploYing the Schottky Barner pnnclple In a large area metaHo-sl

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Elektronische Bauelemente BAT54H 0.2A, 30V Silicon Hot-Carrier Detector Surface Mount Schottky Barrier Diode RoHS Compliant Product A suffix of “-C”

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Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipa

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Silicon Hot–Carrier Diodes Schottky Barrier Diode These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD54DWT1/D Dual Schottky Barrier Diodes These Schottky barrier diodes are designed fo

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Production specification Dual Hot-Carrier Diodes FEATURES z Very low capacitance. Pb z Extremely low minority carrier lifetime. Lead-free z Low

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MMBD501 SOT-23 (TO-236AA/AB) HOT-CARRIER DIODE MAXIMUM RATINGS Rating Reverse Voltage Symbol VR THERMAL CHARACTERISTICS Characteristic *Total Dev

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MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−effi

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily

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MMBD352LT1G, MMBD353LT1G, NSVMMBD353LT1G, MMBD354LT1G, NSVMMBD354LT1G, MMBD355LT1G Dual Hot Carrier Mixer Diodes These devices are designed primarily

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lN5823, lN5824, lN5825 (SILICON) Designers Data Sheet HOT CARRIER POWER RECTIFIERS emploYing the Schottky Barner pnnclple In a large area metaHo-sl

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Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipa

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MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power diss

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