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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

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BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to NPN 2SD313  Low Collector-Emitter Saturation Voltage MECHANICALDATA  Case:TO-220  Case Materia

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FEATURES • High Voltage • Complement to BC546,BC547,BC548 Plastic-Encapsulate Transistors BC556/BC557/BC558 (PNP) Maximum Ratings (Ta=25 unless othe

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Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell den

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ZENER DIODES FEATURES Low cost Smal lsize Glass sealed MECHANICAL DATA Case: LL34 glass case Terminals: solderable per MIL - STD - 202, method 208 Pol

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Plastic-Encapsulate Transistors FEATURES Complementary To S9015W. Excellent HFE Linearity. Power dissipation.(P C=0.2W) Marking:J6 MAXIMUM RATINGS

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Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% Absolute M

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BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

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Glass-Encapsulate Diodes SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. Standard Zener voltag

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1A LOW DROPOUT VOLTAGE REGULATOR The HKT1117 series of adjustable and fixed voltage regulators are designed to provide 1A output current and to opera

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Plastic-Encapsulate Diodes ZENER DIODES FEATURES Planar die construction General purpose, Medium current Ideally suited for automated assembly proces

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Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES or use in low voltage, high frequency inverters Free wheeling, and polarity protection app

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Plastic-Encapsulate Mosfets FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High satu

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ZENER DIODES FEATURES Low cost Smal lsize Glass sealed MECHANICAL DATA Case: SOD-80 glass case Terminals: solderable per MIL - STD - 202, method 208 P

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REPLACEMENT TYPE : MMBTA28 FEATURES  Darlington Amplifier HABTA28(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted

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Plastic-Encapsulate Transistors FEATURES • High power gain KTC3879 (NPN) Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter

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Plastic-Encapsulate Diodes SWITCHING DIODES FEATURES Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) 1SS184 MAR

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REPLACEMENT TYPE : 2SD965A HED965A(NPN) GENERAL PURPOSE TRANSISTOR FEATURES  Low Collector-Emitter Saturation Voltage  Large Collector Power Dissi

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Glass-Encapsulate Diodes SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. Standard Zener voltag

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