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Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET Description The 8205A uses advanced trench technology to provide excellent RDS(ON

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FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Thi

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SCHOTTKY BARRIER DIODE 1N5711W FEATURES  Low Forward Voltage  Fast Switching Time  Low Reverse Capacitance  Small Surface Mount device  PN Junc

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BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

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BIPOLAR TRANSISTOR (NPN) FEATURES  Complementary to KTA1273  High Current Application  Surface Mount device MECHANICAL DATA  Case: SOT-89  Case

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REPLACEMENT TYPE : MMBT2907 FEATURES  Epitaxial Planar Die Construction  Complementary NPN Type Available(HABT2222) HABT2907(PNP) SWITCHING TRANSIS

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REPLACEMENT TYPE : 2SD1005 FEATURES  Small Flat Package  High Breakdown Voltage  Excellent DC Current Gain Linearity HED1005(NPN) GENERAL PURPOSE

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REPLACEMENT TYPE : MMBT2222 FEATURES  Genernal Purpose Amplifier HABT2222(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise not

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FEATURES  Glass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  I

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FEATURES  Glass Passivated Die Construction  Super-Fast Recovery Time For High Efficiency  Low Forward Voltage Drop and High Current Capability  I

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REPLACEMENT TYPE : 2SC2411 FEATURES  High ICMax.ICMax.=0.5mA  Low VCE(sat).Optimal For Low Voltage Operation  Complements The HAA1036 MAXIMUM RATI

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Plastic-Encapsulate Transistors FEATURES • Low saturation voltage • Excellent DC current gain characteristics • Complements to 2SC4672 Maximum Ratin

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REPLACEMENT TYPE :MMBT4401 FEATURES  Switching Transistor HABT4401(NPN) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Pa

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Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% Absolute M

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REPLACEMENT TYPE : MMBTA05 FEATURES  Driver Transistor HABTA05(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

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ZENER DIODES FEATURES Planar Die Construction. 350mW Power Dissipation Zener Voltages From 2.4V - 39V Ideally Suited For Automated Assembly Prcesses

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Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE FEATURES or use in low voltage, high frequency inverters Free wheeling, and polarity protection app

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REPLACEMENT TYPE : 2SD874 FEATURES  Low Collector-Emitter Saturation Voltage  Large Collector Power Dissipation  Mini Power Type Package HED874 (N

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Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V 2SA812

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Plastic-Encapsulate Mosfets PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 10 V 40 0.051 at VGS = 4.5 V ID (A)a 5.6 5.1 Qg (Typ.) 2.9 nC AP

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