CS830A4RD (Huajing Microelectronics)
Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET
CS830 A4RD
○R
General Description：
CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig
(5 views)
2CZ20100A9S (Huajing Microelectronics)
N-type Silicon Schottky Rectifier Diode
2CZ20100 A8S ， 。 、 、。
N 2CZ20100 A9S
○R
●150℃ ● ● ● ●
VRRM IF（AV） VF（MAX）
100 2×10 0.85
V A V
-10℃～40℃ 1
＜85％
265℃
（Per
(4 views)
3DD13003U1D (Huajing Microelectronics)
Silicon NPN Transistor
NPN
3DD13003 U1D
○R
3DD13003 U1D NPN ， ， ， ， 、。
● ● ● ● ●
● ● ●
VCEO IC
Ptot （Ta=25℃）
200 1.8 0.8
V A W
TO-92
(4 views)
CS3N80ARH (Huajing Microelectronics)
Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET
CS3N80 ARH
○R
General Description：
CS3N80 ARH, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-al
(4 views)
CS50N20ANH (Huajing Microelectronics)
Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET
CS50N20 ANH
○R
General Description：
CS50N20 ANH, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-
(4 views)
CV203CZ (Huajing Microelectronics)
10W car radio audio power amplifier
10W
1.
CV203CZ
10W
1.6
2.
2.1
ZIP5
CV203CZ
B 3.5A
2.2
1 2 3
IN NF GND
4 OUT 5 VCC
14 0510 5807123-5542 14
0510 5803016
3.
3.1 DC
3.3
Tam
(4 views)
BT40T60ANFU (Huajing Microelectronics)
Silicon FS Trench IGBT
Silicon FS Trench IGBT
○R
BT40T60 ANFU
General Description：
VCES
600
V
Using HUAJING's proprietary trench design and advanced Field Stop (FS) I
(4 views)
CS1N60B1R (Huajing Microelectronics)
Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET
CS1N60 B1R
○R
General Description：
CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig
(3 views)
CS1N60B3R (Huajing Microelectronics)
Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET
CS1N60 B3R
○R
General Description：
CS1N60 B3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig
(3 views)
CS7N65A4R (Huajing Microelectronics)
Silicon N-Channel Power MOSFET
Silicon N-Channel Power MOSFET
CS7N65 A4R
○R
General Description：
CS7N65 A4R, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-al
(3 views)
3DD3040A4 (Huajing Microelectronics)
Silicon NPN bipolar transistor
NPN 3DD3040 A4
○R
3DD3040 A4 NPN ， ， ， 、 。
● ● ● ● ●
● ● ●
-10℃～40℃ 1 265℃
＜85％
VCEO IC
Ptot（TC=25℃）
450 2 30
V
(3 views)
3DD13005A4-H (Huajing Microelectronics)
Silicon NPN bipolar transistor
(3 views)
BT25T120CKR (Huajing Microelectronics)
Silicon FS Trench IGBT
Silicon FS Trench IGBT BT25T120 CKR
○R
General Description：
Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integr
(3 views)
2CZ10150A8 (Huajing Microelectronics)
Silicon Schottky rectifier diode
(3 views)
2CR164A9D (Huajing Microelectronics)
N-type Silicon Schottky Rectifier Diode
2CR164 A9D N ， ， 、 。
N 2CR164 A9D
○R
● ● ● ●
● ● ● ●
VRRM IF（AV） VF（IF=8A） trr（IF=0.5A）
400 2×8 1.3 40
V A V ns
TO-220F
(3 views)
2CZ10100A8 (Huajing Microelectronics)
N-type Silicon Schottky Rectifier Diode
N
2CZ10100 A8
○R
2CZ10100 A8 ， 。 、 、。
●150℃ ● ● ● ●
VRRM IF（AV） VF（MAX）
100 10 0.85
V A V
-10℃～40℃ 1
＜85％
265℃
，Ta= 25
(3 views)
3DD3150A8 (Huajing Microelectronics)
Silicon NPN Transistor
(3 views)
3DD4520A4 (Huajing Microelectronics)
Silicon NPN Transistor
NPN
3DD4520 A4
○R
3DD4520 A4 NPN ， ， ， 、 。
● ● ● ● ●
● ● ●
VCEO IC
Ptot （Tc=25℃）
450 2 35
V A W
TO-252
-10℃～40℃
(3 views)
3DD13009C8 (Huajing Microelectronics)
Silicon NPN Transistor
(3 views)
3DD3015A3 (Huajing Microelectronics)
Silicon NPN Transistor
NPN
3DD3015 A3
○R
3DD3015 A3 NPN ， ， ， 、 。
● ● ● ● ●
● ● ●
VCEO IC
Ptot （Tc=25℃）
450 1.2 25
V A W
TO-251
-10℃～40
(3 views)
