IH-3 Datasheet | Specifications & PDF Download

Free Datasheet http://www.datasheet-pdf.com/ FHP740 FHP740 N MOS 。 AC-DC ， DC-DC， HPMW。 ★ ★ ★ 7A,400V,RDS(on)(）0.51Ω 、 （TC =25℃） — TC=2

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HCA60R040F Dec 2020 HCA60R040F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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IHW30N160R2 Soft Switching Series TrenchStop® Reverse Conducting (RC-)IGBT with monolithic body diode Features: • Powerful monolithic Body Diode wi

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KSX13007A Series KSH13007A KSH13007AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 8A General Description • High voltage, high speed po

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* '6 72  *' 6 72 ) ' * 6 VDSS ID VGSS PD TJ Tstg EAS Ciss Coss Crss VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0

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3A Avg. 600 Volts Standard Recovery Diode 30PDA60 ˙࠷େఆ֨ɹ.BYJNVN 3BUJOHT *UFN ͘Γฦ͠ϐʔΫ‫ిٯ‬ѹ 3FQFUJUJWF
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3FWFSTF
7PMUBHF 4ZNCPM 733. ฏ‫ۉ‬੔ྲྀిྲྀ WF

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FHP730 N MOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 5.5A,400V,RDS(on)(）0.9Ω 、 FHP730 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg （TC=25℃）

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FHF8N60NMOS 。AC-DC ，DC-DC，HPMW。 ★ ★ ★ 8A,600V,RDS(on)(）0.8Ω 、 FHF8N60 （TC=25℃） — TC=25℃ TC=25℃ VDSS ID VGS PD TJ Tstg 600 8 ±30 52

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* '6 72  *' 6 72 ) ' * 6 VDS ID VGS PD TJ Tstg EAS Ciss Coss Crss VDS 9,VGS 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+]

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HRP105N15H Jan 2016 HRP105N15H 150V N-Channel Trench MOSFET Features ‰ High Speed Power Switching, Logic Level ‰ Enhanced Body diode dv/dt capabili

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KSX13005A Series KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A General D

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20200 1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG 1 1.A 2.K 3.A TO-220F is VBR IR=1.0mA TA=25 VF

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Fast Recovery Diode NSF03A40 nSMC ■ / Features ・ trr Fast recovery time ・ IR Low leakage current ・ ソフトリカバリー Soft recovery RoHS ・ RoHS compliant ・ AEC

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1A Avg. 600 Volts Standard Recovery Diode 10JDA60 INSTANTANEOUS FORWARD CURRENT (A) 10 5 2 1 0.5 0.2 0.1 0 FORWARD CURRENT VS. VOLTAGE 10JDA60 Tj

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BT136- 600 BT136-600 4 Quadrants Sensitive TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V  R.M.S On–State Current (IT(RMS) = 4A)  Sensit

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