.
3BR4765JZ - ICE3BR4765JZ
Version 2.1, 30 Aug 2011 ÂŽ Never stop thinking. Free Datasheet http://www.datasheet4u.com/ ICE3BR4765JZ Revision History: 2011-8-30 Previous Ver.06N03LA - Power Transistor
OptiMOSŽ2 Power-Transistor Features ⢠Ideal for high-frequency dc/dc converters ⢠N-channel ⢠Logic level ⢠Excellent gate charge x R DS(on) prod.6R125P - Power Transistor
CoolMOSTM Power Transistor Features ⢠Lowest figure-of-merit RONxQg ⢠Ultra low gate charge ⢠Extreme dv/dt rated ⢠High peak current capability ⢠Qua.K50T60 - IGBT
IKW50N60T TRENCHSTOP⢠Series q Low Loss DuoPack : IGBT in TRENCHSTOP⢠and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.70S360P7 - MOSFET
IPA70R360P7S MOSFET 700V CoolMOSª P7 Power Device CoolMOS⢠is a revolutionary technology for high voltage power MOSFETs, designed according to the su.H20R1202 - Reverse Conducting IGBT
IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: ⢠Powerful monolithic Body Diode .ICE3BR4765JZ - Off-Line SMPS Current Mode Controller
Version 2.1, 30 Aug 2011 ÂŽ Never stop thinking. Free Datasheet http://www.datasheet4u.com/ ICE3BR4765JZ Revision History: 2011-8-30 Previous Ver.H30R1202 - Reverse Conducting IGBT
IHW30N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: ⢠Powerful monolithic Body Diode with very low forward.H25R1202 - Reverse Conducting IGBT
IHW25N120R2 Soft Switching Series Reverse Conducting IGBT with monolithic body diode Features: ⢠Powerful monolithic Body Diode with very low forward.K75T60 - IGBT
IKW75N60T TRENCHSTOP⢠Series q Low Loss DuoPack : IGBT in TRENCHSTOP⢠and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.K30T60 - IKW30N60T
IKW30N60T TRENCHSTOP⢠Series q Low Loss DuoPack : IGBT in TRENCHSTOP⢠and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.K25H1203 - IGBT
' $ ( ## # )* + , - . # $ %% / ' $ # 0+* / # *. /0 $ %&% ' $ ( ## # / 1 21 1 3 1 4 5+ /6 #% 7* *+ % # / 8(% # # 9) , 1 # / 1# 1 .6R160C6 - MOSFET
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS⢠C6 600V 600V CoolMOS⢠C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe.G40T120 - IGW40T120
TrenchStopÂŽ Series IGW40T120 Low Loss IGBT in TrenchStopÂŽ and Fieldstop technology C ďˇ Short circuit withstand time â 10ďs ďˇ Designed for : - Freq.70S600P7 - MOSFET
IPD70R600P7S MOSFET 700V CoolMOSª P7 Power Transistor CoolMOS⢠is a revolutionary technology for high voltage power MOSFETs, designed according to th.TLF12505 - Optimos Powerstage
Automotive 60A OptimosTM Powerstage TLF12505 OptimosTM Powerstage TLF12505 Features ⢠Integrated driver, control MOSFET Q1 and synchronous MOSFET Q2 â˘.CY8C4146AXI-S445 - 4100S Plus MCU
CY8C41xx PSoC⢠4 MCU: PSoC⢠4100S Plus Based on ArmŽ CortexŽ-M0+ CPU General description PSoC⢠4 is controllers awsitchalaanblAermanŽdCroerctoenxŽ.CY8C4146AZE-S455 - Automotive PSoC 4100S Plus MCU
CY8C41xx Automotive PSoC⢠4: PSoC⢠4100S Plus Based on ArmŽ CortexŽ-M0+ CPU General description PSoC⢠4 is a scalable and reconfigurable platform arch.PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 â 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.6R190E6 - E6 Power Transistor
0**L ;]]ZDEIk =0 F]eS` J`O\aWab]` AFM0*H+3*=0& AFF0*H+3*=0& AF80*H+3*=0 ) 8TaR`X_bX^] ;]]ZDEIk Wa O `Sd]ZcbW]\O`g bSQV\]Z]Ug T]` VWUV d]ZbOUS ^]eS` .