IPA086N10N3 Datasheet | Specifications & PDF Download

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4

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isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 4.5mΩ (max) ·Enhancement mode ·Fast Swi

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4

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