IPP041N12N3 G OptiMOSTM3 Power-Transistor Feature.
Infineon
IPB038N12N3 - Power Transistor
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.
INCHANGE
IPB038N12N3G - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IPB038N12N3G ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance.
Infineon Technologies AG
IPB038N12N3G - Power-Transistor
IPP041N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.