IPB048N15N5 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 120A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Fast Switching Speed ·Minimum L

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IPB048N15N5 MOSFET OptiMOSª5 Power-Transistor, 150 V Features • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • 175

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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IPB048N15N5LF MOSFET OptiMOSTM 5 Linear FET, 150 V Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide saf

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