IPD640N06L Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤64mΩ ·Enhancement mode: ·100% avalanche

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IPD640N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °

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OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating te

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IPD640N06LG www.VBsemi.com IPD640N06LG N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS =

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