l Advanced Process Technology l Dynamic dv/dt Rati.
International Rectifier
IRF2807 - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generat.
INCHANGE
IRF2807ZL - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.
International Rectifier
IRF2807ZLPBF - AUTOMOTIVE MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
International Rectifier
AUIRF2807 - Power MOSFET
PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET® Power MOSFET D Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/d.
International Rectifier
IRF2807PbF - HEXFET Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated .
INCHANGE
IRF2807Z - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching S.
International Rectifier
IRF2807ZSPBF - AUTOMOTIVE MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
International Rectifier
IRF2807ZPBF - AUTOMOTIVE MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av.
International Rectifier
IRF2807LPbF - HEXFET Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
International Rectifier
IRF2807SPbF - HEXFET Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le.
International Rectifier
IRF2807L - HEXFET Power MOSFET
PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalan.
International Rectifier
IRF2807S - HEXFET Power MOSFET
PD - 94170 Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalan.
INCHANGE
IRF2807S - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRF2807S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
INCHANGE
IRF2807ZS - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRF2807ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1.
INCHANGE
IRF2807 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.
International Rectifier
IRF2807ZL - AUTOMOTIVE MOSFET
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
International Rectifier
IRF2807ZS - AUTOMOTIVE MOSFET
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
International Rectifier
IRF2807Z - AUTOMOTIVE MOSFET
PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O.
INCHANGE
IRF2807L - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.
