IRF2807 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generat

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isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching S

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Isc N-Channel MOSFET Transistor IRF2807S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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PD - 96384A AUTOMOTIVE GRADE AUIRF2807 HEXFET® Power MOSFET D Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/d

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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av

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Isc N-Channel MOSFET Transistor IRF2807ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av

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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Av

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Le

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PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O

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PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O

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PD - 94659A IRF2807Z AUTOMOTIVE MOSFET IRF2807ZS Features O Advanced Process Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C O

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