IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL EN.
STMicroelectronics
IRF521 - N-Channel MOSFET
IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IR.
International Rectifier
IRF5210S - Power MOSFET
PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operat.
International Rectifier
IRF5210 - Power MOSFET
PD - 91434A IRF5210 HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temp.
Infineon
AUIRF5210S - Power MOSFET
AUTOMOTIVE GRADE AUIRF5210S Features Advanced Process Technology P-Channel MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating Fast Swi.
International Rectifier
IRF5210LPBF - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l So.
INCHANGE
IRF5210 - P-Channel MOSFET
isc P-Channel MOSFET Transistor INCHANGE Semiconductor IRF5210,IIRF5210 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.06Ω ·Enhancement mod.
INCHANGE
IRF5210L - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology .
INCHANGE
IRF5210S - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤60mΩ(@VGS= -10V; ID= -24A) ·Advanced trench process technology .
STMicroelectronics
IRF521FI - N-Channel MOSFET
IRF 520/FI-521/FI IRF 522/FI-523/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IR.
International Rectifier
IRF5210L - Power MOSFET
PD - 91405C IRF5210S/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF5210S) l Low-profile through-hole (IRF5210L) l 175°C Operat.
International Rectifier
IRF5210SPBF - Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l So.
International Rectifier
AUIRF5210S - Power MOSFET
AUTOMOTIVE GRADE AUIRF5210S HEXFET® Power MOSFET -100V 60m -38A Features l l l l l l l l Advanced Planar Technology P-Channel MOSFET Low On-Resist.
INCHANGE
IRF5210SPBF - P-Channel MOSFET
isc P-Channel MOSFET Transistor ·FEATURES ·P-channel ·With TO-263(D2PAK) packaging ·Uninterruptible power supply ·High speed switching ·Ultra low on-r.
