l Advanced Process Technology l Dynamic dv/dt Rati.
International Rectifier
40
IRF640N - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
INCHANGE
27
IRF640N - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRF640N，IIRF640N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤150mΩ ·Enhancement mode ·Fast Switching Spee.
International Rectifier
12
IRF640NS - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
3
IRF640NL - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
3
IRF640NPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
3
IRF640NSPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
International Rectifier
2
IRF640NLPBF - Power MOSFET
l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si.
INCHANGE
2
IRF640NS - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive.
INCHANGE
2
IRF640NL - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-262 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.