IRF840L Datasheet | Specifications & PDF Download

www.vishay.com IRF840LC Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg

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IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL www.vishay.com Vishay Siliconix Power MOSFET I2PAK (TO-262) D2PAK (TO-263) D G SD G D G S S N

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PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced

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Power MOSFET IRF840L, SiHF840L Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V

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PD- 93766 IRF840LCS IRF840LCL HEXFET® Power MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced

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IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL www.vishay.com Vishay Siliconix Power MOSFET I2PAK (TO-262) D2PAK (TO-263) D G SD G D G S S N

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF840LC ·FEATURES ·With low gate drive requirements ·Ultra low gate charge ·Extremely high f

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IRF840LCS/LCL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unles

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IRF840LCS/LCL Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A D N Channel G Symbol S ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unles

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