IRFBE30 Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor IRFBE30 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =3.0Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V,

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IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configur

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isc N-Channel MOSFET Transistor IRFBE30PBF ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Fast Switching Speed ·100% avalanche tested ·M

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• Lead-Free PD - 94945 IRFBE30PbF Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF

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www.DataSheet4U.com PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleli

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IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configur

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www.DataSheet4U.com PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleli

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www.vishay.com IRFBE30 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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