IRFIB7N50A Datasheet | Specifications & PDF Download

iscN-Channel MOSFET Transistor IRFIB7N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.52Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS

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PD - 91810 SMPS MOSFET IRFIB7N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed

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SMPS MOSFET PD - 94805 IRFIB7N50APbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed po

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IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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