IRFP350 Datasheet | Specifications & PDF Download

Power MOSFET IRFP350, SiHFP350 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 150 Qgs (nC) 23 Qgd (nC) 80

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IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Q

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP350FI FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Vo

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$GYDQFHG 3RZHU 026)(7 IRFP350 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFP350FI Voss 400 V Ros(on) 0.30 10 10 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • H

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isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :

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isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :

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www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved

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www.DataSheet4U.com IRFP350 Data Sheet July 1999 File Number 2319.4 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode sil

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance

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HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance

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