isc N-Channel MOSFET ransistor FEATURES ·Drain C.
STMicroelectronics
IRFP350FI - N-Channel MOSFET
IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFP350FI Voss 400 V Ros(on) 0.30 10 10 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • H.
Fairchild Semiconductor
IRFP350A - Advanced Power MOSFET
www.DataSheet4U.com $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved .
INCHANGE
IRFP350LC - N-Channel MOSFET
isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :.
Inchange Semiconductor
IRFP350R - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance .
Inchange Semiconductor
IRFP350FI - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP350FI FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Vo.
Inchange Semiconductor
IRFP350A - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance .
Inchange Semiconductor
IRFP350 - N-Channel MOSFET Transistor
isc N-Channel MOSFET ransistor FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance :.
Fairchild Semiconductor
IRFP350 - Power MOSFET
$GYDQFHG 3RZHU 026)(7 IRFP350 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
International Rectifier
IRFP350LC - Power MOSFET
HEXFET® Power MOSFET PD - 9.1229 IRFP350LC Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss Iso.
Vishay
IRFP350 - Power MOSFET
Power MOSFET IRFP350, SiHFP350 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 400 VGS = 10 V 150 Qgs (nC) 23 Qgd (nC) 80 .
Vishay
IRFP350LC - Power MOSFET
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Q.
Intersil Corporation
IRFP350 - N-Channel Power MOSFET
www.DataSheet4U.com IRFP350 Data Sheet July 1999 File Number 2319.4 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode sil.
