$GYDQFHG 3RZHU 026)(7 IRFR214 FEATURES ♦ Avala.
Fairchild Semiconductor
IRFR214B - 250V N-Channel MOSFET
IRFR214B / IRFU214B November 2001 IRFR214B / IRFU214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect .
Samsung
IRFR214A - Power MOSFET
)($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ\ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJ\ý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýý.
Fairchild Semiconductor
IRFR214 - Power MOSFET
$GYDQFHG 3RZHU 026)(7 IRFR214 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge.
Intersil Corporation
IRFR214 - N-Channel Power MOSFETs
IRFR214, IRFU214 Data Sheet July 1999 File Number 3274.2 2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon .
Vishay Siliconix
IRFR214 - Power MOSFET
www.vishay.com IRFR214, IRFU214, SiHFR214, SiHFU214 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF.
International Rectifier
IRFR214PBF - Power MOSFET
PD- 95384A IRFR214PbF IRFU214PbF Lead-Free www.DataSheet4U.com www.irf.com 1 12/3/04 IRFR/U214PbF www.DataSheet4U.com 2 www.irf.com IRFR/.
INCHANGE
IRFR214 - N-Channel MOSFET
iscN-Channel MOSFET Transistor IRFR214 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS =.
