IRFR220 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IRFR220N, IIRFR220N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤600mΩ ·Enhancement mode: ·100% avalanche t

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www.vishay.com IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSF

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SMPS MOSFET PD- 95063A IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free VDSS RDS(on) max (mΩ

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IRFR220, IRFU220 Data Sheet July 1999 File Number 2410.2 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.8Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for

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IRFR220B / IRFU220B November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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PD - 95069A IRFR220PbF IRFU220PbF • Lead-Free www.DataSheet4U.com www.irf.com 1 12/14/04 IRFR/U220PbF 2 www.irf.com IRFR/U220PbF www.irf.co

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www.DataSheet4U.com PD- 95063A SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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IRFR220B / IRFU220B IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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