IRFU410 Datasheet | Specifications & PDF Download

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET® Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Te

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PD - 97452 AUTOMOTIVE GRADE Features l l l l l l l HEXFET® Power MOSFET D AUIRFR4104 AUIRFU4104 40V 5.5mΩ 119A 42A Advanced Process Technology Ult

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Advanced Power MOSFET IRFU410A IRFU410A BVDSS = 520 V RDS(on) = 10.0 Ω ID = 1.2 A TO-220 Improved Inductive Ruggedness Rugged Polysilicon Gate Cell

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PD - 95374A AUTOMOTIVE MOSFET Features l l l l l l IRFR4105ZPbF IRFU4105ZPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resist

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PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avala

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www.DataSheet4U.com IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enha

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www.DataSheet4U.com PD - 91302C IRFR/U4105 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105)

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PD - 94752 AUTOMOTIVE MOSFET IRFR4105Z IRFU4105Z HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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www.DataSheet4U.com PD - 94728 AUTOMOTIVE MOSFET IRFR4104 IRFU4104 HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Lo

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www.DataSheet4U.com PD - 97544 AUTOMOTIVE GRADE HEXFET® Power MOSFET Features ● ● ● ● ● ● ● AUIRFR4105Z AUIRFU4105Z 55V 24.5mΩ 30A Advanced Proce

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-

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www.DataSheet4U.com IRFR410B / IRFU410B November 2001 IRFR410B / IRFU410B 500V N-Channel MOSFET General Description These N-Channel enhancement mod

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IRFR410B / IRFU410B November 2001 IRFR410B / IRFU410B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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IRFR410, IRFU410 Data Sheet July 1999 File Number 3372.2 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon

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