IRFU5305 Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ(@VGS= -10V; ID= -16A) ·Advanced trench process technology

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  AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching 

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PD - 91402A IRFR/U5305 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process T

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www.DataSheet4U.com PD-95025A IRFR5305PbF IRFU5305PbF l l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advan

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PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET® Power MOSFET D Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dy

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PD-96341 AUTOMOTIVE MOSFET AUIRFR5305 AUIRFU5305 HEXFET® Power MOSFET D Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dy

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