IRFZ44V Datasheet | Specifications & PDF Download

PD - 94755 AUTOMOTIVE MOSFET IRFZ44VZ IRFZ44VZS IRFZ44VZL HEXFET® Power MOSFET D Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resis

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PD - 94050A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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PD - 95561 l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ44V， IIRFZ44V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤16.5mΩ ·Enhancement

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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PD - 95561 l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T

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Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T

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AUTOMOTIVE GRADE PD - 96354 AUIRFZ44VZS Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switc

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Isc N-Channel MOSFET Transistor IRFZ44VZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·1

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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche R

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PD - 96415 AUTOMOTIVE GRADE Features l Advanced Planar Technology l Low On-Resistance l Dynamic dV/dT Rating l 175°C Operating Temperature l Fast Sw

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PD - 94050A l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to T

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ44VZ，IIRFZ44VZ ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement m

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avala

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