PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C I.
International Rectifier
AUIRGS30B60K - INSULATED GATE BIPOLAR TRANSISTOR
PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE(on) Non Punch Through IGBT Technology • 10µs Short Cir.
International Rectifier
IRGS30B60K - INSULATED GATE BIPOLAR TRANSISTOR
PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low .
International Rectifier
IRGS30B60KPBF - Insulated Gate Bipolar Transistor
PD - 97003 INSULATED GATE BIPOLAR TRANSISTOR IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF Features • Low VCE (on) Non Punch Through IGBT Technology •.
Infineon
AUIRGS30B60K - INSULATED GATE BIPOLAR TRANSISTOR
AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology 10µs Short.
