AUIRGS30B60K

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

* Low VCE(on) Non Punch Through IGBT Technology

* 10µs Short Circuit Capability

* Square RBSOA

* Positive VCE(on) Temperature Coefficient

* Maximum Junction Temperature rated at 175°C

* Lead-Free, RoHS Compliant

* Automotive Qualified

* AU

AUIRGS30B60K

International Rectifier

301.51 KB

Insulated gate bipolar transistor.

📁 Related Datasheet

AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR (Infineon)

AUIRGS4062D1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

AUIRGS4062D1 IGBT (Infineon)

AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR (Infineon)

AUIRGSL4062D1 INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

AUIRGSL4062D1 IGBT (Infineon)

AUIRG4BC30S-S INSULATED GATE BIPOLAR TRANSISTOR (IRF)

AUIRG4BC30S-SL INSULATED GATE BIPOLAR TRANSISTOR (IRF)

AUIRG4BC30U-S UltraFast Speed IGBT (International Rectifier)

TAGS

Image Gallery