* Low VCE (on) Trench IGBT Technology
* Low Switching Losses
* 5μs SCSOA
* Square RBSOA
* 100% of The Parts Tested for ILM
* Positive VCE (on) Temperature Coefficient.
* Ultra Fast Soft Recovery Co-pak Diode
* Tighter Distribution of P
AUIRGSL4062D1 Datasheet (408.90 KB)
AUIRGSL4062D1
International Rectifier
408.90 KB
Insulated gate bipolar transistor.
AUIRGB4062D1
AUIRGS4062D1
AUTOMOTIVE GRADE
AUIRGSL4062D1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C VCES = 600V
Feat.
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