AUIRGSL30B60K, AUIRGS30B60K Datasheet - International Rectifier

AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR

AUIRGSL30B60K Features

* Low VCE(on) Non Punch Through IGBT Technology

* 10µs Short Circuit Capability

* Square RBSOA

* Positive VCE(on) Temperature Coefficient

* Maximum Junction Temperature rated at 175°C

* Lead-Free, RoHS Compliant

* Automotive Qualified

* AU

Datasheet Details

AUIRGSL30B60K, AUIRGS30B60K

International Rectifier

301.51 KB

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: AUIRGSL30B60K, AUIRGS30B60K.
Please refer to the document for exact specifications by model.

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