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AUIRGSL30B60K

INSULATED GATE BIPOLAR TRANSISTOR

AUIRGSL30B60K Features

* Low VCE(on) Non Punch Through IGBT Technology

* 10µs Short Circuit Capability

* Square RBSOA

* Positive VCE(on) Temperature Coefficient

* Maximum Junction Temperature rated at 175°C

* Lead-Free, RoHS Compliant

* Automotive Qualified

* AU

AUIRGSL30B60K Datasheet (301.51 KB)

Preview of AUIRGSL30B60K PDF

Datasheet Details

Part number:

AUIRGSL30B60K

Manufacturer:

International Rectifier

File Size:

301.51 KB

Description:

Insulated gate bipolar transistor.

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TAGS

AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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