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AUIRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR

AUIRGS30B60K Description

AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR .

AUIRGS30B60K Features

* Low VCE (on) Non Punch Through IGBT Technology
* 10µs Short Circuit Capability
* Square RBSOA
* Positive VCE (on) Temperature Coefficient.
* Maximum Junction Temperature rated at 175°C
* Lead-Free, RoHS Compliant
* Automotive Qualified
* Benefits
* Benchma

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INSULATED GATE BIPOLAR TRANSISTOR Infineon
Infineon AUIRGS30B60K-like datasheet