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AUIRGS30B60K - INSULATED GATE BIPOLAR TRANSISTOR

Infineon

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Datasheet Details

Part number	AUIRGS30B60K
Manufacturer	Infineon
File Size	394.85 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	AUIRGS30B60K-Infineon.pdf

AUIRGS30B60K Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free, RoHS Compliant.
Automotive Qualified.
Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance for Increased Reliability.
Low EMI.
Excellent Current Sharing in Parallel Operation C G E n-channel C VCES = 600V IC = 50.

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Published: Dec 16, 2020 |