AUIRGS30B60K Datasheet - Infineon

AUIRGS30B60K, INSULATED GATE BIPOLAR TRANSISTOR

AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (on) Non Punch Through IGBT Technology
* 10µs Short Circuit Capability
* Square RBSOA
* Positive VCE (on) Temperature Coefficient.

* Maximum Junction Temperature rated at 175°C
* Lead-Free, RoHS Compliant
* Automotive Qualified
* Benefits
* Benchma

AUIRGS30B60K-Infineon.pdf