Datasheet4U Logo Datasheet4U.com

IRGS30B60K, IRGB30B60K Datasheet - International Rectifier

IRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR

IRGS30B60K Features

* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits

IRGB30B60K_InternationalRectifier.pdf

This datasheet PDF includes multiple part numbers: IRGS30B60K, IRGB30B60K. Please refer to the document for exact specifications by model.
IRGS30B60K Datasheet Preview Page 2 IRGS30B60K Datasheet Preview Page 3

Datasheet Details

Part number:

IRGS30B60K, IRGB30B60K

Manufacturer:

International Rectifier

File Size:

354.36 KB

Description:

Insulated gate bipolar transistor.

Note:

This datasheet PDF includes multiple part numbers: IRGS30B60K, IRGB30B60K.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRGS30B60KPBF Insulated Gate Bipolar Transistor (International Rectifier)

IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS14C40LPBF IGBT (International Rectifier)

IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS15B60KPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

TAGS

IRGS30B60K IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

IRGS30B60K Distributor