Part number:
IRGS30B60K
Manufacturer:
International Rectifier
File Size:
354.36 KB
Description:
Insulated gate bipolar transistor.
IRGS30B60K Datasheet (354.36 KB)
* Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits
IRGS30B60K Datasheet (354.36 KB)
IRGS30B60K
International Rectifier
354.36 KB
Insulated gate bipolar transistor.
📁 Related Datasheet
IRGS30B60KPBF Insulated Gate Bipolar Transistor (International Rectifier)
IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGS10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGS14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGS14C40LPBF IGBT (International Rectifier)
IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGS15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGS15B60KPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
IRGS4045DPBF Insulated Gate Bipolar Transistor (International Rectifier)
IRGS4055PBF PDP Trench IGBT (International Rectifier)
