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IRGS10B60KDPBF, IRGB10B60KDPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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IRGS10B60KDPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGS10B60KDPBF, IRGB10B60KDPBF. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	IRGS10B60KDPBF, IRGB10B60KDPBF
Manufacturer	International Rectifier ↗
File Size	391.96 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB10B60KDPBF_InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRGS10B60KDPBF, IRGB10B60KDPBF. Please refer to the document for exact specifications by model.

IRGS10B60KDPBF Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Lead-Free G E tsc > 10µs, TJ=150°C n-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. VCE(.

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Published: Jul 4, 2007 |