IRGS10B60KD Features
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits
IRGB10B60KD_InternationalRectifier.pdf
Datasheet Details
IRGS10B60KD, IRGB10B60KD
International Rectifier
327.20 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGS10B60KD, IRGB10B60KD.
Please refer to the document for exact specifications by model.
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