IRGS15B60KPBF Datasheet - International Rectifier

IRGS15B60KPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGS15B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free IRGS15B60KPbF C VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-chann

Datasheet Details

IRGS15B60KPBF

International Rectifier

283.69 KB

Insulated gate bipolar transistor.

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