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IRGS15B60KPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRGS15B60KPBF Features

* Low VCE (on) Non Punch Through IGBT Technology.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Positive VCE (on) Temperature Coefficient.

* Lead-Free IRGS15B60KPbF C VCES = 600V IC = 15A, TC=100°C G E tsc > 10µs, TJ=150°C VCE(on) typ. = 1.8V n-chann

IRGS15B60KPBF Datasheet (283.69 KB)

Preview of IRGS15B60KPBF PDF

Datasheet Details

Part number:

IRGS15B60KPBF

Manufacturer:

International Rectifier

File Size:

283.69 KB

Description:

Insulated gate bipolar transistor.

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IRGS15B60KPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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