IRGS15B60KDPbF Features
* Low VCE (on) Non Punch Through IGBT Technology.
* Low Diode VF.
* 10µs Short Circuit Capability.
* Square RBSOA.
* Ultrasoft Diode Reverse Recovery Characteristics.
* Positive VCE (on) Temperature Coefficient.
* Lead-Free C IRGB15B60KDPbF IR
IRGB15B60KDPbF_InternationalRectifier.pdf
Datasheet Details
IRGS15B60KDPbF, IRGB15B60KDPbF
International Rectifier
824.04 KB
Insulated gate bipolar transistor.
This datasheet PDF includes multiple part numbers: IRGS15B60KDPbF, IRGB15B60KDPbF.
Please refer to the document for exact specifications by model.
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IRGS15B60KDPbF Distributor
