IRGS15B60KD, IRGB15B60KD Datasheet - International Rectifier

IRGS15B60KD INSULATED GATE BIPOLAR TRANSISTOR

IRGS15B60KD Features

* Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com

* Low Diode VF.

* 10µs Short Circuit Capability.

* Square RBSOA.

* Ultrasoft Diode Reverse Recovery Characteristics.

* Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ

Datasheet Details

IRGS15B60KD, IRGB15B60KD

International Rectifier

373.45 KB

Insulated gate bipolar transistor.

This datasheet PDF includes multiple part numbers: IRGS15B60KD, IRGB15B60KD.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IRGS15B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS15B60KPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS10B60KD INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS10B60KDPBF INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS14C40L INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS14C40LPBF IGBT (International Rectifier)

IRGS30B60K INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

IRGS30B60KPBF Insulated Gate Bipolar Transistor (International Rectifier)

TAGS

IRGS15B60KD Distributor