IRL530N Datasheet | Specifications & PDF Download

PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching F

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l Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully

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• Lead-Free PD- 95593 IRL530NSPbF IRL530NLPbF www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 w

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PD - 91349C IRL530NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL530NS) l Low-profile through-hole (IRL530NL) l 175°C Oper

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isc N-Channel MOSFET Transistor IRL530N，IIRL530N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.1Ω ·Enhancement mode ·Fast Switching Speed

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• Lead-Free PD- 95593 IRL530NSPbF IRL530NLPbF www.irf.com 1 07/21/04 IRL530NS/LPbF 2 www.irf.com IRL530NS/LPbF www.irf.com 3 IRL530NS/LPbF 4 w

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Isc N-Channel MOSFET Transistor IRL530NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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• Lead-Free PD - 95451 IRL530NPbF www.irf.com 1 6/23/04 IRL530NPbF 2 www.irf.com IRL530NPbF www.irf.com 3 IRL530NPbF 4 www.irf.com IRL530NPbF

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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