IRL540 Datasheet | Specifications & PDF Download

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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Previous Datasheet Index Next Data Sheet PD - 9.1495 PRELIMINARY l l l l l l IRL540N HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Proce

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$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extende

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PD -91535 IRL540NS/L HEXFET® Power MOSFET Advanced Process Technology l Surface Mount (IRL540NS) l Low-profile through-hole (IRL540NL) l 175°C Operat

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PD- 95234 IRL540NS/LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IR

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PD- 95234 IRL540NS/LPbF • Lead-Free www.DataSheet4U.com www.irf.com 1 05/04/04 IRL540NS/LPbF 2 www.irf.com IRL540NS/LPbF www.irf.com 3 IR

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www.vishay.com IRL540 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 VGS = 5.0 V

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.044Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤ 44mΩ (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanc

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Power MOSFET IRL540S, SiHL540S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 100 VGS = 5 V 64 Qgs (nC) 9.4 Qgd (nC) 27

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• Lead-Free PD - 94997 IRL540NPbF HEXFET® Power MOSFET www.irf.com 1 2/10/04 IRL540NPbF 2 www.irf.com IRL540NPbF www.irf.com 3 IRL540NPbF 4 ww

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Isc N-Channel MOSFET Transistor IRL540NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

Rating: 1 ★ (1 votes)