IRLZ34 Datasheet | Specifications & PDF Download

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperat

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www.DataSheet4U.com PD - 9.1307B IRLZ34N HEXFET® Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 1

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IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) 60 VGS = 5 V 35 Qgs (nC) 7.

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PD - 9.905A IRLZ34S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175°C

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Power MOSFET IRLZ34, SiHLZ34 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 60 VGS = 5.0 V 35 Qgs (nC) 7.1 Qgd (nC) 25 C

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode Logic level TrenchMOSTM transistor GENERAL DESCRIPTION

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www.DataSheet4U.com PD - 94830 l l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fa

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www.DataSheet4U.com l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLZ34N， IIRLZ34N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤35mΩ ·Enhancement mo

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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperat

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www.DataSheet4U.com l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C

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PD - 9.905A IRLZ34S/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRLZ34S) Low-profile through-hole (IRLZ34L) 175°C

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www.vishay.com IRLZ34S, SiHLZ34S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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