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IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr

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PNP Silicon AF Transistors • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types

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OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod

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Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page

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IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKZ75N65EH5 650V DuoPack IGBT and diode Hig

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IGW50N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junctio

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TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C  Short circuit withstand time – 10s  Designed for : - Freq

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IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode

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Version 2.1, 6 May 2011 ® ICE3BR1065JF Off-Line SMPS Current Mode Controller with integrated 650V CoolMOS®and Startup cell (frequency jitter Mode) in

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Da ta s h e e t, Ve rs i o n 2 . 2, Ju l y 4 , 2 0 1 1 Q u a s i- R e s o na n t C on t r o ll er PWM Po we r M an a ge me nt & Su pp l y N e v e

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IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW50N60H3 600V high speed switching ser

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.2 Final Powe

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www.DataSheet4U.com IPB04N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo

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V er s io n 2.1 a , 1 1 Ja n 2 01 2 ® N e v e r s t o p t h i n k i n g . http://www.Datasheet4U.com CoolSET®-F3R80 ICE3AR2280JZ Revision History

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www.DataSheet4U.com IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel •

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe

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CoolMOS® Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accord

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