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K75T60 - IGBT
IKW75N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.06N03LA - Power Transistor
OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excellent gate charge x R DS(on) prod.K75EEH5 - High speed 5 IGBT
IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKZ75N65EH5 650VDuoPackIGBTanddiode Hig.K50H603 - IGBT
IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingser.H20R1202 - Reverse Conducting IGBT
IHW20N120R2 Soft Switching Series www.DataSheet4U.com Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode .K25H1203 - IGBT
! ' $ ( ## # ! " # # $ %&% + !)* + ,!- !. # $ %% /' $# 0+* /# *. /0 $ %&% ' $ ( ## # / 1 21 1 3 1 4 5+ /6 #% 7* *+ % # / 8(% # # 9) , 1 # / 1 # .09N03LA - Power Transistor
www.DataSheet4U.com IPB09N03LA IPI09N03LA, IPP09N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • .6R190C6 - MOSFET
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R190C6 DataSheet Rev.2.2 Final Powe.G40T120 - IGW40T120
TrenchStop® Series IGW40T120 Low Loss IGBT in TrenchStop® and Fieldstop technology C Short circuit withstand time – 10s Designed for : - Freq.K07N120 - Fast IGBT in NPT-technology
SKW07N120 www.DataSheet4U.com Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • Lower Eoff compared to previous genera.3BR4765JZ - ICE3BR4765JZ
V e rs io n 2 .1 , 3 0 A u g 2 01 1 ® N e v e r s t o p t h i n k i n g . Free Datasheet http://www.datasheet4u.com/ ICE3BR4765JZ Revision Histor.6R160C6 - MOSFET
MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™C6600V 600VCoolMOS™C6PowerTransistor IPx60R160C6 DataSheet Rev.2.2 Final Powe.G50T60 - IGBT
IGW50N60T TRENCHSTOP™ Series Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features: Very low VCE(sat) 1.5V (typ.) Maximum Junctio.2N7002DW - Small-Signal-Transistor
OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according t.20N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic a.K30T60 - IKW30N60T
IKW30N60T TRENCHSTOP™ Series q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr.ICE2A265 - (ICE2xxxx) Second Generation Integrated Power Ics With Enhanced Protection Features And Lowest Standby
( DataSheet : www.DataSheet4U.com ) Datash eet, V ersion 3 .0 , A ugust 2002 CoolSET™-F2 ICE2A0565/165/265/365 ICE2B0565/165/265/365 ICE2A180Z/280Z .13N03LA - IPD13N03LA
www.DataSheet4U.com IPD13N03LA IPU13N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to J.K10T60 - IGBT
TrenchStop® Series IKP10N60T p Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode.2QR2280Z - ICE2QR2280Z
Datasheet,Version 2.1, August 30, 2011 ® Never stop thinking. CoolSET® - Q1 ICE2QR2280Z Revision History: August 30, 2011 Previous Version: Page .