Infineon Technologies IPA Datasheet | Specifications & PDF Download

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ CE 800V CoolMOS™ CE Power Transistor IPA80R1K0CE Data Sheet Rev. 2.1 Final Power Man

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IPA90R500C3 CoolMOS™ Power Transistor Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated • High peak current capability • Qualified ac

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Type OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS™ E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Fi

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Data Sheet, DS1, Jan. 2003 IPAC-X ISDN PC Adapter Circuit PSB/PSF 21150, V 1.4 Wired Communications Never stop thinking. ABM®, ACE®, AOP®, ARCOFI®, A

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 100V OptiMOS™3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.3 Final Powe

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Man

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ E6 600V 600V CoolMOS™ E6 Power Transistor IPx60R750E6 Data Sheet Rev. 2.3 Final Powe

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Fina

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CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qual

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Data Sheet, DS1, Jan. 2003 IPAC-X ISDN PC Adapter Circuit PSB/PSF 21150, V 1.4 Wired Communications Never stop thinking. ABM®, ACE®, AOP®, ARCOFI®, A

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OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gat

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IPA030N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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IPA045N10N3 G MOSFET OptiMOSTM3 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low

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