IngaAs Datasheet | Specifications & PDF Download

PHOTODIODE InGaAs PIN photodiode G8376 series Standard type InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed respons

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MITSUBISHI SEMICONDUCTOR PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MGFC4419G I

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DATASHEET Photon Detection C30659 Series – 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Excelitas’ C30659-1550E InGasAs APD Preamplifi

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MITSUBISHI LASER DIODES PD8XX2 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8042,PD8932 FEATURES • Active diameter 50µm • Low • High • Very • H

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PD100 100μm InGaAs Photodiode FEATURES • • • • • Planar Structure High Responsivity Low Dark Current Dielectric Passivation 100% Purge Burn-in PD100-0

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www.DataSheet4U.com PD1450-35T52 InGaAs PIN-PD Outer dimension(Unit:mm) PD1450-35T52 is InGaAs PIN-photodiode. This PIN-photodiode is consists of a

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DATA SHEET LASER DIODE NDL7503P Series InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7503P Series is

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P R E L I M I N A R Y U 4 t e C30659-900-1060-1550nm Series e h Silicon and InGaAs APD Preamplifier Modules S a at Applications .D Range Finding w Co

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www.DataSheet4U.com NEC's φ50µm InGaAs APD WITH INTERNAL PREAMPLIFIER IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATIONS FEATURES • HIGH DATA RATE CAPABILI

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www.DataSheet4U.com NEC's 1310 nm InGaAsP MQW DFB LASER DIODE NX8303BG-CC IN COAXIAL PACKAGE NX8303CG-CC FOR 622 Mb/s APPLICATION FEATURES • PEAK EMI

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50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features:  High reliability, Ultra low dark curre

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