J305 Datasheet | Specifications & PDF Download

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Analog Applications • High input impedance • Low g

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SMD Type MOSFET P Channel MOSFET 2SJ3053DV ■ Features ● Surface Mount Package ● Super High Density Cell Design for Extremely Low RDS(on) ● Exceptio

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SSM3J305T www.DataSheet4U.com TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications • • 4 V drive

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HI-SINCERITY MICROELECTRONICS CORP. HJ3055 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6004 Issued Date : 1994.10.04 Revised Date : 2008.04.09 Page

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage-

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Plastic Film Capacitors Metallized Polypropylene Film Capacitor (For Automotive) Series： ECWFG NEW Non-inductive construction using metallized Poly

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Plastic Film Capacitors Metallized Polypropylene Film Capacitor (For Automotive) Series： ECWFG NEW Non-inductive construction using metallized Poly

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N-Channel JFETs J304/305 Vishay Siliconix PRODUCT SUMMARY Part Number J304 J305 VGS(off) (V) −2 to −6 −0.5 to −3 V(BR)GSS Min (V) −30 −30 gfs Mi

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InterFET Product Folder Technical Support Order Now J304-5 J304, J305 N-Channel JFET Features • InterFET N0026S Geometry • Low Noise: 4 nV/√Hz T

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2003/07/31 REVISED DATE :2007/01/25D GJ3055 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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www.DataSheet4U.com MJ3055 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.1

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B GJ3055S N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS

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