SSM3J305T datasheet by Toshiba.
| Part number | SSM3J305T |
|---|---|
| Datasheet | SSM3J305T_ToshibaSemiconductor.pdf |
| File Size | 201.89 KB |
| Manufacturer | Toshiba |
| Description | Field-Effect Transistor Silicon P-Channel MOS Type |
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TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm Ratings (Ta = 25°C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch...
| Part Number | Description |
|---|---|
| SSM3J304T | Silicon P-Channel MOSFET |
| SSM3J306T | Silicon P-Channel MOSFET |
| SSM3J307T | Silicon P-Channel MOSFET |
| SSM3J317T | Power Management Switch Applications High-Speed Switching Applications |
| SSM3J321T | Silicon P-Channel MOSFET |
| SSM3J325F | Silicon P-Channel MOSFET |
| SSM3J327F | Silicon P-Channel MOSFET |
| SSM3J327R | Silicon P-Channel MOSFET |
| SSM3J328R | Silicon P-Channel MOSFET |
| SSM3J331R | Silicon P-Channel MOSFET |
