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SSM3J305T
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TOSHIBA Field-Effect Transistor
Silicon P-Channel MOS Type
SSM3J305T
High-Speed Switching Applications
• • 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −30 ± 20 −1.7 −3.4 700 150 −55 to 150 Unit V V A mW °C °C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
SSM3J305T Datasheet
