SSM3J305T Description
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications 4 V drive Low ON-resistance: Ron = 477 mΩ (max) (@VGS = −4 V) Ron = 237 mΩ (max) (@VGS = −10 V) Unit: mm Ratings (Ta = 25°C) Characteristic Drain source voltage Gate source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch...