J340 Datasheet | Specifications & PDF Download

Ordering number:ENN6420 P-Channel Silicon MOSFET www.DataSheet4U.com 2SJ340 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. ·

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DC-DC Converter Control Circuits FEATURES  Output Switch Current In Excess of 1.5A  2% Reference Accuracy  Low Quiescent Current : 2.5mA(Typ.)  Op

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Ordering number:ENN6420 P-Channel Silicon MOSFET 2SJ340 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switc

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3402 N-Channel MOSFET DESCRIPTION The CJ3402 uses advanced tr

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CJ3401A SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEATURE z High dense cell design for extremely

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401A P-Channel Enhancement Mode Field Effect Transistor FEAT

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3404 N-Channel Enhancement Mode Field Effect Transistor DESCR

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CJ3400 Feature  30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V. RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V.  Super High dense cell des

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3407 P-Channel Enhancement Mode Field Effect Transistor Gener

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MOSFET CJ3401-HF (P-Channel ) Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free Features -P-Channel -High dense cell desig

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400 N-Channel Enhancement Mode Field Effect Transistor FEATU

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3400A N-Channel Enhancement Mode Field Effect Transistor V(B

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JIEJIE MICROELECTRONICS CO. , Ltd JSPJ340A~JSPJ3200A 3A Schottky Barrier Rectifier Rev.1.0 DESCRIPTION Plastic package has underwriters laboratorie

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6012-B Issued Date : 1996.04.12 Revised Date : 2000.11.01 Page No. : 1/3 HJ340 NPN EPITAXIAL PLANA

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MOSFET CJ3400-HF (N-Channel ) Reverse Voltage: 30 Volts Forward Current: 5.8 A RoHS Device Halogen Free Features - N-Channel Enhancement mode field ef

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CJ3401 Feature  -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V.  Super High dense ce

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CJ3402 SOT-23 Plastic-Encapsulate MOSFETS CJ3402 N-Channel MOSFET DESCRIPTION The CJ3402 uses advanced trench technology to provide excellent RDS(ON

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ3401 P-Channel Enhancement Mode Field Effect Transistor SOT-

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CJ3407-VB CJ3407-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.049 at VGS = -

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Synchronous Boost DC/DC Regulator PJ3400 0043 Features Description z Up to 96% Efficiency z Low voltage start-up：0.9V z Shut-down current: < 1µA z

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