SSM3J340R - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) 4.0-V drive (2) Low drain-source on-resistance : RDS(ON) = 86 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 73 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment SOT-23F SSM3J340R 1: Gate 2: Source 3: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-03 2019-05-17 Rev.3.0 SSM3J340R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-.

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Published: Jun 22, 2019 |