SSM3J338R - Silicon P-Channel MOSFET

Toshiba

Datasheet Details

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ. ) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ. ) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ. ) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-08 2025-02-20 Rev.3.0 SSM3J338R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics.

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Published: Jun 22, 2019 |