Part number:
SSM3J338R
Manufacturer:
File Size:
423.72 KB
Description:
Silicon p-channel mosfet.
SSM3J338R Datasheet (423.72 KB)
* (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3J338R 1: Gate 2: Source 3: Drain ©2015-2025 1 Toshiba Electron
SSM3J338R Datasheet (423.72 KB)
SSM3J338R
423.72 KB
Silicon p-channel mosfet.
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